Intel corporation (20240429126). CONDUCTIVE LINES HAVING MOLYBDENUM LINER AND TUNGSTEN FILL FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
CONDUCTIVE LINES HAVING MOLYBDENUM LINER AND TUNGSTEN FILL FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Organization Name
Inventor(s)
Jeffrey S. Leib of Portland OR (US)
Daniel B. O’brien of Beaverton OR (US)
Jennifer Zavestoski of Portland OR (US)
Hye Kyung Kim of Hillsboro OR (US)
Caitlin Kilroy of Hillsboro OR (US)
Cortnie Vogelsberg of Beaverton OR (US)
Abha Gosavi of Hillsboro OR (US)
Ashish Bhattarai of Hillsboro OR (US)
CONDUCTIVE LINES HAVING MOLYBDENUM LINER AND TUNGSTEN FILL FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
This abstract first appeared for US patent application 20240429126 titled 'CONDUCTIVE LINES HAVING MOLYBDENUM LINER AND TUNGSTEN FILL FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Original Abstract Submitted
embodiments of the disclosure are in the field of integrated circuit structure fabrication. in an example, an integrated circuit structure includes a plurality of conductive lines, individual ones of the plurality of conductive lines having a liner including molybdenum (mo), and a fill including tungsten (w). the integrated circuit structure also includes an inter-layer dielectric (ild) structure having portions between adjacent ones of the plurality of conductive lines.
- Intel corporation
- Jeffrey S. Leib of Portland OR (US)
- Daniel B. O’brien of Beaverton OR (US)
- Jennifer Zavestoski of Portland OR (US)
- Hye Kyung Kim of Hillsboro OR (US)
- Caitlin Kilroy of Hillsboro OR (US)
- Cortnie Vogelsberg of Beaverton OR (US)
- Abha Gosavi of Hillsboro OR (US)
- Ashish Bhattarai of Hillsboro OR (US)
- H01L23/48
- H01L23/498
- CPC H01L23/481