Apple inc. (20240429962). GATE-TO-CASCODE COUPLED INDUCTOR-BASED LNA FOR NOISE REDUCTION AND NEUTRALIZATION
Contents
GATE-TO-CASCODE COUPLED INDUCTOR-BASED LNA FOR NOISE REDUCTION AND NEUTRALIZATION
Organization Name
Inventor(s)
Hongrui Wang of San Jose CA (US)
Abbas Komijani of Mountain View CA (US)
GATE-TO-CASCODE COUPLED INDUCTOR-BASED LNA FOR NOISE REDUCTION AND NEUTRALIZATION
This abstract first appeared for US patent application 20240429962 titled 'GATE-TO-CASCODE COUPLED INDUCTOR-BASED LNA FOR NOISE REDUCTION AND NEUTRALIZATION
Original Abstract Submitted
in some source degeneration-based cascode lnas, a cascode transistor may contribute a large portion of noise at mmwave frequencies due to lower output impedance from a bottom transistor (e.g., amplifying transistor or transconductance transistor) of the cascode. the cascode noise may negatively impact performance of the lna. a first inductor (e.g., cascode inductor) may be coupled to the source of the cascode transistor and a second inductor (e.g., notch inductor) may be coupled to the gate of the bottom transistor such that the cascode inductor and a notch inductor inductively couple to each other, introducing a reverse-transmission zero in-band to reduce or eliminate cascode noise contribution and neutralize gate-drain capacitance of the bottom transistor with minimal area consumption.
