18818298. VAPOR DEPOSITION PROCESSES (ASM IP Holding B.V.)
Contents
VAPOR DEPOSITION PROCESSES
Organization Name
Inventor(s)
[[:Category:Timo Hatanp�� of Espoo (FI)|Timo Hatanp�� of Espoo (FI)]][[Category:Timo Hatanp�� of Espoo (FI)]]
Anton Vihervaara of Helsinki (FI)
VAPOR DEPOSITION PROCESSES
This abstract first appeared for US patent application 18818298 titled 'VAPOR DEPOSITION PROCESSES
Original Abstract Submitted
The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.
