18818617. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)

From WikiPatents
Revision as of 07:42, 19 December 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

FUJI ELECTRIC CO., LTD.

Inventor(s)

Yuki Sawa of Matsumoto-city (JP)

Motoyoshi Kubouchi of Matsumoto-city (JP)

Kota Ohi of Matsumoto-city (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18818617 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE



Original Abstract Submitted

Provided is a semiconductor device provided with a vertical element, where the vertical element has: a drift region of a first conductivity type provided in a semiconductor substrate; a first implantation portion provided below the drift region; and a second implantation portion provided below the drift region and having lower carrier implantation efficiency than the first implantation portion, an area of the first implantation portion is larger than an area of the second implantation portion at a back surface of the semiconductor substrate, and the vertical element has the first implantation portion and the second implantation portion which are alternately provided in a predetermined direction.

Retrieved from "http://wikipatents.org/index.php?title=18818617._SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_SEMICONDUCTOR_DEVICE_(FUJI_ELECTRIC_CO.,_LTD.)&oldid=271752"