18815864. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
Contents
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Kai-Lin Lee of Kinmen County (TW)
Zhi-Cheng Lee of Tainan City (TW)
Wei-Jen Chen of Tainan City (TW)
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 18815864 titled 'HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.
