18219107. SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME (UNITED MICROELECTRONICS CORP.)
Contents
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME
Organization Name
Inventor(s)
Jing-Wen Huang of Pingtung County (TW)
Chih-Yuan Wen of Tainan City (TW)
Lung-En Kuo of Tainan City (TW)
Po-Chang Lin of Tainan City (TW)
Kun-Yuan Liao of Hsinchu City (TW)
Chung-Yi Chiu of Tainan City (TW)
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME
This abstract first appeared for US patent application 18219107 titled 'SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME
Original Abstract Submitted
A semiconductor device with a deep trench isolation and a shallow trench isolation includes a substrate. The substrate is divided into a high voltage transistor region and a low voltage transistor region. A deep trench is disposed within the high voltage transistor region. The deep trench includes a first trench and a second trench. The first trench includes a first bottom. The second trench extends from the first bottom toward a bottom of the substrate. A first shallow trench and a second shallow trench are disposed within the low voltage transistor region. A length of the first shallow trench is the same as a length of the second trench. An insulating layer fills in the first trench, the second trench, the first shallow trench and the second shallow trench.
