18705932. MODIFICATION OF METAL-CONTAINING SURFACES IN HIGH ASPECT RATIO PLASMA ETCHING (LAM RESEARCH CORPORATION)
Contents
MODIFICATION OF METAL-CONTAINING SURFACES IN HIGH ASPECT RATIO PLASMA ETCHING
Organization Name
Inventor(s)
Chen Li of Santa Clara CA (US)
Neil Macaraeg Mackie of Fremont CA (US)
Dongho Heo of Sunnyvale CA (US)
MODIFICATION OF METAL-CONTAINING SURFACES IN HIGH ASPECT RATIO PLASMA ETCHING
This abstract first appeared for US patent application 18705932 titled 'MODIFICATION OF METAL-CONTAINING SURFACES IN HIGH ASPECT RATIO PLASMA ETCHING
Original Abstract Submitted
Methods and apparatus for etching high aspect ratio features in substrates having mixed material stacks are provided herein. Methods involve using low plasma power, high chamber pressure, and/or low temperature while exposing the substrate to a metal-containing additive gas during etching using a fluorocarbon gas.
