18740272. HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS (STMicroelectronics International N.V.)
Contents
HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS
Organization Name
STMicroelectronics International N.V.
Inventor(s)
Marco Zamprogno of Cesano Maderno (IT)
Fabio Severini of Orzinuovi (IT)
HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS
This abstract first appeared for US patent application 18740272 titled 'HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS
Original Abstract Submitted
A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.
