18702404. DISPLAY DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

From WikiPatents
Revision as of 07:27, 19 December 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

DISPLAY DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Yuichi Yanagisawa of Atsugi (JP)

Ryota Hodo of Atsugi (JP)

Hiromi Sawai of Atsugi (JP)

DISPLAY DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE

This abstract first appeared for US patent application 18702404 titled 'DISPLAY DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE



Original Abstract Submitted

A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer, a second insulating layer, a first light-emitting element, a second light-emitting element, and a resin layer. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second organic layer, and the common electrode. The first insulator has a groove. The groove has a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode. The second insulating layer has a region in contact with part of the top surface of the first organic layer, a region in contact with the side surface of the first organic layer, and a region in contact with the first insulating layer below the first pixel electrode. The resin layer is positioned between the first organic layer and the second organic layer. The common electrode is provided to cover the top surface of the resin layer.