18818786. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18818786 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
