18738930. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Masami Jintyou of Shimotsuga (JP)
Masayoshi Dobashi of Shimotsuga (JP)
Junichi Koezuka of Tochigi (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18738930 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
Original Abstract Submitted
A transistor that can be miniaturized and highly reliable is provided. A semiconductor device includes a transistor and a first insulating layer. The transistor includes first to third conductive layers, a semiconductor layer, and a second insulating layer. The first insulating layer includes a first layer and a second layer over the first layer. The first insulating layer is over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is over the second layer. The semiconductor layer is in contact with the first and second conductive layers and with a side surface of the first layer inside the first opening. The second insulating layer covers the semiconductor layer in the first opening, and the third conductive layer covers the second insulating layer in the first opening. The first insulating layer includes a second opening at a position different from the first opening. The second insulating layer is in contact with the first layer inside the second opening. The first layer includes an oxide insulating film, and the second layer includes an insulating film having an oxygen barrier property.
