18820481. SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE
This abstract first appeared for US patent application 18820481 titled 'SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE
Original Abstract Submitted
A semiconductor device with large memory capacity is provided. A semiconductor device includes first to fourth insulators, a first conductor, a second conductor, and a first semiconductor, and the first semiconductor includes a first surface and a second surface. A first side surface of the first conductor is included on the first surface of the first semiconductor, and a first side surface of the first insulator is included on a second side surface of the first conductor. The second insulator is included in a region including a second side surface and a top surface of the first insulator, a top surface of the first conductor, and the second surface of the first semiconductor. The third insulator is included on a formation surface of the second insulator, and the fourth insulator is included on a formation surface of the third insulator. The second conductor is included in a region overlapping the second surface of the first semiconductor in a region where the fourth insulator is formed. The third insulator has a function of accumulating charge. A tunnel current is induced between the second surface of the first semiconductor and the third insulator with the second insulator therebetween by supply of a potential to the second conductor.
