18230270. OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
Albert Chen of Milpitas CA (US)
Xiang Yang of Santa Clara CA (US)
OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS
This abstract first appeared for US patent application 18230270 titled 'OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS
Original Abstract Submitted
A memory apparatus and method of operation are provided. The apparatus includes memory cells configured to retain a threshold voltage corresponding to one of a plurality of data states. The memory cells are disposed in memory holes grouped in blocks. A control means is configured to determine an amount of the memory cells of one of the blocks that are programmed during at least one read operation. The control means adjusts at least one read parameter based on the amount of the memory cells of the one of the blocks that are programmed. The control means is also configured to utilize the adjusted at least one read parameter while reading the memory cells to determine if the memory cells have the threshold voltage above one or more read levels associated with each of the plurality of data states in the at least one read operation.
