18740054. Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications (Western Digital Technologies, Inc.)
Contents
Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
Brian R. York of San Jose CA (US)
Sharon Swee Ling Banh of San Jose CA (US)
Hassan Osman of San Jose CA (US)
Hisashi Takano of Fujisawa-shi (JP)
Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications
This abstract first appeared for US patent application 18740054 titled 'Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications
Original Abstract Submitted
The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, TaW(110), TaW(100), TaWN, TaWN, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, TaWN, TaWN, TaW (110), TaW(100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.
