Jump to content

18669285. MEMORY DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Revision as of 07:16, 19 December 2024 by Unknown user (talk) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Lien Linus Lu of Hsinchu (TW)

MEMORY DEVICE

This abstract first appeared for US patent application 18669285 titled 'MEMORY DEVICE



Original Abstract Submitted

A memory device is provided. The memory device includes a cell array having a plurality of cells, each of the plurality of cells operative to store a bit value. The memory device further includes a reset circuit connected to the cell array. The reset circuit is operative to reset, in parallel, the bit value stored in each of the plurality of cells to a predetermined bit value.

Cookies help us deliver our services. By using our services, you agree to our use of cookies.