17940403. CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Chaelyoung Kim of Hwaseong-si (KR)

Jinyoung Park of Suwon-si (KR)

Jaehyug Lee of Hwaseong-si (KR)

Hoyoung Kim of Seongnam-si (KR)

CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17940403 titled 'CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME

Simplified Explanation

The abstract describes a chemical mechanical polishing apparatus that includes a platen with a polishing pad, a slurry supply unit, an electrode, a power supply unit, and a polishing head. The apparatus is used for polishing semiconductor substrates.

  • The platen is attached with a polishing pad and rotates in one direction using a driving means.
  • The slurry supply unit provides a slurry containing an abrasive and an additive with a specific zeta potential to the polishing pad.
  • An electrode is positioned below the polishing pad.
  • The power supply unit applies a voltage, including a DC pulse with a polarity opposite to the additive's zeta potential, to the electrode.
  • The polishing head is installed on the polishing pad and rotates the semiconductor substrate in contact with the polishing pad.

Potential Applications

  • Semiconductor manufacturing: The apparatus can be used in the production of semiconductor devices, where polishing is required for surface planarization.
  • Integrated circuit fabrication: The technology can be applied in the manufacturing process of integrated circuits to achieve precise polishing of semiconductor substrates.

Problems Solved

  • Efficient polishing: The apparatus combines chemical and mechanical polishing techniques to achieve a high level of surface planarity on semiconductor substrates.
  • Uniform polishing: The slurry supply unit ensures a consistent supply of slurry with the desired zeta potential, resulting in uniform polishing across the substrate.
  • Enhanced control: The application of a voltage pulse with a specific polarity helps control the polishing process and improve the overall quality of the polished surface.

Benefits

  • Improved surface quality: The combination of chemical and mechanical polishing techniques results in a highly smooth and planar surface on the semiconductor substrate.
  • Enhanced productivity: The apparatus enables efficient and uniform polishing, reducing the time and effort required for surface planarization.
  • Precise control: The application of a voltage pulse allows for better control over the polishing process, leading to improved accuracy and reproducibility.


Original Abstract Submitted

A chemical mechanical polishing apparatus, includes: a platen having a polishing pad attached to an upper surface thereof, and rotatably installed in one direction by a driving means, a slurry supply unit supplying a slurry including an abrasive and an additive having a zeta potential of a first polarity to the polishing pad, an electrode disposed below the polishing pad, a power supply unit applying a voltage including a DC pulse of a second polarity, opposite to the first polarity, to the electrode, and a polishing head installed on the polishing pad, and rotating a semiconductor substrate in contact with the polishing pad.