18701477. SEMICONDUCTOR LASER (Mitsubishi Electric Corporation)

SEMICONDUCTOR LASER

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Yuki Taketomi of Tokyo (JP)

SEMICONDUCTOR LASER

This abstract first appeared for US patent application 18701477 titled 'SEMICONDUCTOR LASER

Original Abstract Submitted

A compound semiconductor multilayer (-) is film formed on a compound semiconductor substrate () and includes a ridged stripe () and a resonator end face () which corresponds to a cleavage plane perpendicular to a long-side direction of the stripe (). A first Au electrode () is formed on the stripe () in a region of up to the resonator end face (). A second Au electrode () is formed on the first Au electrode () in a region excluding a region adjacent to the resonator end face (). A metal layer () made of metal harder than Au is formed on the first Au electrode () in the region adjacent to the resonator end face (). A coating film () is formed on the resonator end face ().