17550200. RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Chih-Chao Yang of Glenmont NY (US)
Theodorus E. Standaert of Clifton Park NY (US)
Daniel Charles Edelstein of White Plains NY (US)
RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17550200 titled 'RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The abstract describes a semiconductor device and its formation process. Here is a simplified explanation:
- The semiconductor device consists of a memory device placed on top of a first bottom interconnect.
- The first bottom interconnect is embedded in a first dielectric layer, which provides insulation and support.
- Additionally, a second bottom interconnect is embedded in the same dielectric layer, positioned adjacent to the first bottom interconnect.
- The top surface of the second bottom interconnect is recessed, meaning it is lower in height compared to the top surface of the first bottom interconnect.
Potential Applications:
- This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
- It can be utilized in memory modules, processors, and other integrated circuits.
Problems Solved:
- The formation of the semiconductor device solves the problem of interconnect placement and integration within a dielectric layer.
- It provides a solution for embedding multiple bottom interconnects in a single dielectric layer, allowing for compact and efficient circuit design.
Benefits:
- The recessed top surface of the second bottom interconnect allows for better integration with other components and reduces the risk of interference.
- The embedded interconnects in the dielectric layer provide improved electrical performance and reliability.
- The compact design of the semiconductor device enables smaller and more efficient electronic devices.
Original Abstract Submitted
A semiconductor device and formation thereof. The semiconductor device includes a memory device located on top of a first bottom interconnect, wherein the first bottom interconnect is embedded in a first dielectric layer. The semiconductor device further includes a second bottom interconnect embedded in the first dielectric layer, wherein the second bottom interconnect is adjacent to the first bottom interconnect. A top surface of the second bottom interconnect is recessed relative to a top surface of the first bottom interconnect.