Samsung electronics co., ltd. (20240414925). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
This abstract first appeared for US patent application 20240414925 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Original Abstract Submitted
a semiconductor device has, in a gate insulating layer, in an xps spectrum of o s obtained by an x-ray photoelectron spectroscopy (xps) using a monochromatic aluminum k� (1486.6 ev) source, a ratio (%) of an al—o peak observed in a binding energy of about 530.3 ev to about 531.6 ev to all peaks of greater than or equal to about 80%.