Taiwan semiconductor manufacturing company, ltd. (20240381795). INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES simplified abstract
Contents
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Mauricio Manfrini of Zhubei City (TW)
Chung-Te Lin of Tainan City (TW)
Gerben Doornbos of Kessel-Lo (BE)
Marcus Johannes Henricus Van Dal of Linden (BE)
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381795 titled 'INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
The abstract describes an integrated chip with a memory device that includes a bottom electrode, an upper electrode, and an intercalated metal/dielectric structure sandwiched between them.
- The memory device has a bottom electrode on a semiconductor substrate.
- An upper electrode is placed over the bottom electrode.
- An intercalated metal/dielectric structure is between the bottom and upper electrodes.
- The intercalated structure consists of a lower dielectric layer, an upper dielectric layer, and a first metal layer separating them.
Potential Applications: - This technology can be used in various electronic devices requiring memory storage. - It can be applied in smartphones, tablets, computers, and other consumer electronics.
Problems Solved: - Provides a compact and efficient memory storage solution for integrated chips. - Enhances the performance and reliability of memory devices in electronic products.
Benefits: - Improved memory storage capacity and speed. - Enhanced durability and longevity of memory devices. - Cost-effective and scalable solution for integrated chips.
Commercial Applications: Title: Advanced Memory Storage Technology for Integrated Chips This technology can revolutionize the memory storage capabilities of electronic devices, leading to faster and more reliable performance. It can cater to a wide range of commercial applications in the consumer electronics industry, driving innovation and competitiveness in the market.
Questions about Memory Storage Technology: 1. How does this memory storage technology compare to traditional memory devices? This technology offers higher performance and efficiency compared to traditional memory devices, making it a promising solution for future electronic products. 2. What are the potential challenges in implementing this advanced memory storage technology? The main challenges may include manufacturing complexity and cost considerations, which need to be addressed for widespread adoption in the industry.
Original Abstract Submitted
some embodiments relate to an integrated chip including a memory device. the memory device includes a bottom electrode disposed over a semiconductor substrate. an upper electrode is disposed over the bottom electrode. an intercalated metal/dielectric structure is sandwiched between the bottom electrode and the upper electrode. the intercalated metal/dielectric structure comprises a lower dielectric layer over the bottom electrode, an upper dielectric layer over the lower dielectric layer, and a first metal layer separating the upper dielectric layer from the lower dielectric layer.
