Taiwan semiconductor manufacturing company, ltd. (20240381791). MEMORY STACKS AND METHODS OF FORMING THE SAME simplified abstract
Contents
MEMORY STACKS AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tung-Ying Lee of Hsinchu City (TW)
Shao-Ming Yu of Hsinchu County (TW)
Yu-Chao Lin of Hsinchu City (TW)
MEMORY STACKS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381791 titled 'MEMORY STACKS AND METHODS OF FORMING THE SAME
Simplified Explanation: This patent application describes a memory stack with a unique structure, including a bottom electrode layer, a top electrode layer, and a phase change layer in between. The top electrode layer is wider than the phase change layer, and the uncovered portion of the top electrode layer is rougher than the portion covered by the phase change layer.
Key Features and Innovation:
- Memory stack structure with bottom electrode layer, top electrode layer, and phase change layer.
- Top electrode layer wider than phase change layer.
- Roughness difference between uncovered and covered portions of the top electrode layer.
Potential Applications: This technology could be used in various memory storage devices, such as non-volatile memory and solid-state drives.
Problems Solved: This technology addresses the need for efficient and reliable memory storage solutions with optimized electrode layer structures.
Benefits:
- Improved memory stack performance.
- Enhanced data storage capabilities.
- Increased reliability and efficiency in memory devices.
Commercial Applications: Potential commercial applications include the manufacturing of advanced memory storage devices for consumer electronics, data centers, and other digital storage systems.
Prior Art: Readers interested in prior art related to this technology may explore patents and research papers on memory stack structures and phase change memory devices.
Frequently Updated Research: Stay informed about the latest advancements in memory stack technology by following research publications and industry developments in the field.
Questions about Memory Stacks: 1. What are the key components of a memory stack and how do they interact? 2. How does the width difference between the top electrode layer and the phase change layer impact the performance of the memory stack?
Original Abstract Submitted
memory stacks and method of forming the same are provided. a memory stack includes a bottom electrode layer, a top electrode layer and a phase change layer between the bottom electrode layer and the top electrode layer. a width of the top electrode layer is greater than a width of the phase change layer. a first portion of the top electrode layer uncovered by the phase change layer is rougher than a second portion of the top electrode layer covered by the phase change layer.
