Taiwan semiconductor manufacturing company, ltd. (20240381785). METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES simplified abstract
Contents
METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jun-Yao Chen of Taoyuan City (TW)
Harry-Hak-Lay Chuang of Zhubei City (TW)
METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381785 titled 'METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES
The present disclosure pertains to a semiconductor structure with a memory array positioned above a substrate, consisting of multiple rows and columns. The memory array includes a first memory cell and a second memory cell at the same height above the substrate. The second memory cell is located at the edge of the array, separating the first memory cell from the edge, and the top surface of the first memory cell is recessed compared to the top surface of the second memory cell.
- Memory array structure with adjacent first and second memory cells at a common elevation above the substrate.
- Second memory cell positioned at the edge of the array, separating the first memory cell from the edge.
- Top surface of the first memory cell recessed relative to the top surface of the second memory cell.
Potential Applications: - Memory storage devices - Semiconductor manufacturing - Electronic devices
Problems Solved: - Efficient use of space in memory arrays - Improved memory cell layout - Enhanced performance of semiconductor structures
Benefits: - Increased memory array density - Enhanced overall functionality of electronic devices - Improved manufacturing processes
Commercial Applications: Memory storage devices, smartphones, tablets, computers, and other electronic devices could benefit from this technology.
Questions about Semiconductor Structure with Adjacent Memory Cells: 1. How does the positioning of the second memory cell at the edge of the array impact overall memory array performance? 2. What are the potential challenges in manufacturing semiconductor structures with adjacent memory cells?
Original Abstract Submitted
the present disclosure relate to semiconductor structure that includes a substrate and a memory array. the memory array is spaced over the substrate and has a plurality of rows and a plurality of columns. further, the memory array comprises a first memory cell and a second memory cell that are adjacent at a common elevation above the substrate. the second memory cell is at an edge of the memory array and separates the first memory cell from the edge, and a top surface of the first memory cell is recessed relative to a top surface of the second memory cell.
