Taiwan semiconductor manufacturing company, ltd. (20240381783). MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yuan Hao Chang of Hsinchu County (TW)
Po-Sheng Lu of Hsinchu City (TW)
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381783 titled 'MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
The abstract describes the incorporation of an MRAM cell block and a magnetic shielding structure into a metal interconnect of an integrated circuit (IC) device.
- The magnetic shielding structure is provided by metallization layers and via layers with wires and vias containing a magnetic shielding material.
- The magnetic shielding material can form the wires and vias, act as a liner around the wires, or be a layer of the wires.
- The wires and vias may also contain a more conductive metal in addition to the magnetic shielding material.
- The metal interconnect includes layers above or below the magnetic shielding structure that lack the magnetic shielding material and are more conductive.
- The MRAM cell block with the magnetic shielding structure can be used as a standalone memory device or integrated into a 3-D IC device with a second substrate containing a conventional metal interconnect.
Potential Applications: - Memory devices - Integrated circuits - 3-D IC devices
Problems Solved: - Minimizing magnetic interference in MRAM cell blocks - Enhancing the performance and reliability of integrated circuits
Benefits: - Improved data retention and stability in memory devices - Enhanced functionality of integrated circuits - Reduction of electromagnetic interference
Commercial Applications: Title: Magnetic Shielding Technology for Enhanced IC Performance This technology can be utilized in various industries such as telecommunications, consumer electronics, and automotive for improved device performance and reliability.
Questions about Magnetic Shielding Technology: 1. How does the magnetic shielding material in the wires and vias help reduce electromagnetic interference? 2. What are the advantages of incorporating an MRAM cell block with a magnetic shielding structure into a metal interconnect of an IC device?
Original Abstract Submitted
an mram cell block and a magnetic shielding structure for the mram cell block are incorporated into a metal interconnect of an integrated circuit (ic) device. the magnetic shielding structure may be provided by metallization layers and via layers having wires and vias that incorporate a magnetic shielding material. the magnetic shielding material may form the wires and vias, form a liner around the wires, or may be a layer of the wires. the wires and vias may also include a metal that is more conductive than the magnetic shielding material. the metal interconnect may include layers above or below the magnetic shielding structure that lack the magnetic shielding material and are more conductive. the mram cell block with the magnetic shielding structure is optionally provided as a standalone memory device or incorporated into a 3-d ic device that includes a second substrate having a conventional metal interconnect.
