Taiwan semiconductor manufacturing company, ltd. (20240381780). METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) INCLUDING FORMING A MAGNETO RESISTIVE SENSOR (MR) OVER A SPIN TORQUE OSCILLATOR (STO) simplified abstract
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) INCLUDING FORMING A MAGNETO RESISTIVE SENSOR (MR) OVER A SPIN TORQUE OSCILLATOR (STO)
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huanlong Liu of San Jose CA (US)
Ru-Ying Tong of Los Gatos CA (US)
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) INCLUDING FORMING A MAGNETO RESISTIVE SENSOR (MR) OVER A SPIN TORQUE OSCILLATOR (STO) - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381780 titled 'METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) INCLUDING FORMING A MAGNETO RESISTIVE SENSOR (MR) OVER A SPIN TORQUE OSCILLATOR (STO)
The patent application describes a method for forming a magnetic tunnel junction (MTJ) with a high tunneling magnetoresistance ratio and low resistance-area value while preserving perpendicular magnetic anisotropy in the bottom and top magnetic layers.
- Passive oxidation step of a first Mg layer on the bottom magnetic layer with a maximum oxygen pressure of 10-5 torr.
- Bottom portion of the first Mg layer remains unoxidized to protect the bottom magnetic layer during subsequent oxidation and anneal processes.
- Formation of an uppermost Mg layer as the top layer in the tunnel barrier stack before depositing the top magnetic layer.
Potential Applications: - Magnetic random access memory (MRAM) - Magnetic sensors - Spintronic devices
Problems Solved: - Achieving high tunneling magnetoresistance ratio in MTJs - Preserving perpendicular magnetic anisotropy in magnetic layers
Benefits: - Improved performance of MTJs - Enhanced data storage capabilities - Increased efficiency in spintronic devices
Commercial Applications: Title: "High-Performance Magnetic Tunnel Junctions for Advanced Electronics" This technology can be utilized in the development of next-generation MRAM, magnetic sensors, and other spintronic devices, catering to the growing demand for high-performance data storage and processing solutions in various industries.
Questions about the technology: 1. How does the passive oxidation step contribute to preserving perpendicular magnetic anisotropy? 2. What are the specific advantages of using Mg layers in the tunnel barrier stack?
Original Abstract Submitted
a method of forming a mtj with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance�area value is disclosed. the method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. a key feature is a passive oxidation step of a first mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5 torr. a bottom portion of the first mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and mtj. an uppermost mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.
