Taiwan semiconductor manufacturing company, ltd. (20240381779). Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement simplified abstract

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Guenole Jan of San Jose CA (US)

Jodi Mari Iwata of San Carlos CA (US)

Ru-Ying Tong of Los Gatos CA (US)

Huanlong Liu of Sunnyvale CA (US)

Yuan-Jen Lee of Fremont CA (US)

Jian Zhu of San Jose CA (US)

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381779 titled 'Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement

The abstract describes a patent application for a perpendicularly magnetized magnetic tunnel junction (p-MTJ) where a boron-containing free layer (FL) undergoes plasma treatment with inert gas and natural oxidation processes before additional layers are deposited. A metal layer, such as Mg, is deposited on the FL to enhance perpendicular magnetic anisotropy or form a tunnel barrier layer. Annealing steps are crucial for assisting in segregating boron from the FL to increase the FL magnetic moment. A post-oxidation plasma treatment may also be used to remove excess boron near the FL surface before the metal layer deposition. Both plasma treatments use low power to remove a minimal thickness of the FL.

• Boron-containing free layer (FL) undergoes plasma treatment with inert gas and natural oxidation processes.
• Metal layer, like Mg, deposited on FL to enhance perpendicular magnetic anisotropy or form a tunnel barrier layer.
• Annealing steps crucial for assisting in segregating boron from FL to increase FL magnetic moment.
• Post-oxidation plasma treatment may be used to remove excess boron near FL surface before metal layer deposition.
• Low power plasma treatments used to remove minimal FL thickness.

• • Potential Applications:**

- Data storage devices - Magnetic sensors - Spintronic devices

• • Problems Solved:**

- Enhancing perpendicular magnetic anisotropy - Improving magnetic moment of the free layer - Controlling boron segregation in the free layer

• • Benefits:**

- Increased performance of magnetic tunnel junctions - Enhanced data storage capabilities - Improved reliability of spintronic devices

• • Commercial Applications:**

Potential commercial applications include the development of advanced data storage devices, magnetic sensors, and spintronic technologies. This innovation could lead to more efficient and reliable electronic devices in various industries.

• • Questions about Perpendicularly Magnetized Magnetic Tunnel Junctions:**

1. How does the plasma treatment with inert gas affect the properties of the boron-containing free layer? 2. What role does the metal layer, such as Mg, play in enhancing perpendicular magnetic anisotropy in the magnetic tunnel junctions?

Original Abstract Submitted

a perpendicularly magnetized magnetic tunnel junction (p-mtj) is disclosed wherein a boron containing free layer (fl) is subjected to a plasma treatment with inert gas, and a natural oxidation (nox) process to form bobefore overlying layers are deposited. a metal layer such as mg is deposited on the fl as a first step in forming a hk enhancing layer that increases fl perpendicular magnetic anisotropy, or as a first step in forming a tunnel barrier layer on the fl. one or more anneal steps are essential in assisting bosegregation from the free layer and thereby increasing the fl magnetic moment. a post-oxidation plasma treatment may also be used to partially remove boproximate to the fl top surface before the metal layer is deposited. both plasma treatments use low power (<50 watts) to remove a maximum of 2 angstroms fl thickness.