Taiwan semiconductor manufacturing company, ltd. (20240381673). SEMICONDUCTOR DEVICES USING CARBON NANOTUBES simplified abstract

SEMICONDUCTOR DEVICES USING CARBON NANOTUBES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Gerben Doornbos of Kessel-Lo (BE)

Marcus Johannes Henricus Van Dal of Linden (BE)

Timothy Vasen of Tervuren (BE)

SEMICONDUCTOR DEVICES USING CARBON NANOTUBES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381673 titled 'SEMICONDUCTOR DEVICES USING CARBON NANOTUBES

Simplified Explanation: The patent application describes a method of forming a gate-all-around field-effect transistor (GAA FET) using a fin structure with carbon nanotubes (CNTs) embedded in a semiconductor layer.

Key Features and Innovation:

• Formation of a fin structure with CNTs embedded in a semiconductor layer.
• Creation of a sacrificial gate structure over the fin structure.
• Doping of the semiconductor layer at the source/drain region of the fin structure.
• Formation of an isolation insulating layer and patterning to create a source/drain opening.
• Formation of a source/drain contact layer over the doped source/drain region of the fin structure.

Potential Applications: This technology can be applied in the semiconductor industry for advanced field-effect transistors, leading to improved performance and efficiency in electronic devices.

Problems Solved: The technology addresses the need for more efficient and high-performance field-effect transistors by utilizing CNTs in the fin structure.

Benefits:

• Enhanced performance and efficiency in electronic devices.
• Improved conductivity and control in field-effect transistors.
• Potential for smaller and more powerful electronic devices.

Commercial Applications: The technology has potential commercial applications in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency.

Questions about Gate-All-Around Field Effect Transistor (GAA FET): 1. How does the use of carbon nanotubes in the fin structure impact the performance of the field-effect transistor? 2. What are the potential challenges in scaling this technology for mass production in the semiconductor industry?

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Original Abstract Submitted

in a method of forming a gate-all-around field effect transistor (gaa fet), a fin structure including cnts embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.