Taiwan semiconductor manufacturing company, ltd. (20240381670). TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE simplified abstract
Contents
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Harry-Hak-Lay Chuang of Zhubei City (TW)
Jiunyu Tsai of Hsinchu City (TW)
Sheng-Huang Huang of Hsinchu City (TW)
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381670 titled 'TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE
The abstract describes an integrated circuit with a magnetoresistive random-access memory (MRAM) cell, including metal layers stacked with dielectric layers, a magnetic tunneling junction (MTJ), and a top electrode with a sidewall spacer.
- The integrated circuit includes a semiconductor substrate and an interconnect structure with metal layers stacked over each other.
- A magnetic tunneling junction (MTJ) is placed over a bottom electrode, with a top electrode and sidewall spacer surrounding it.
- Less than the entire top electrode surface is in direct electrical contact with a metal via connected to the upper metal layer.
Potential Applications: - Memory storage in electronic devices - High-speed data processing applications - Low-power consumption devices
Problems Solved: - Improved data storage and processing capabilities - Enhanced reliability and durability of memory cells - Reduced power consumption in electronic devices
Benefits: - Faster data access and processing speeds - Increased memory density in smaller devices - Extended lifespan of electronic devices
Commercial Applications: Title: "Next-Generation Memory Technology for Enhanced Data Processing" This technology can be used in smartphones, computers, IoT devices, and other electronic systems requiring fast and reliable memory storage.
Questions about the technology: 1. How does the integration of MRAM cells improve data processing in electronic devices? 2. What are the advantages of using a magnetic tunneling junction (MTJ) in memory storage applications?
Original Abstract Submitted
some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (mram) cell. the integrated circuit includes a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. the interconnect structure includes metal layers that are stacked over one another with dielectric layers disposed between. the metal layers include a lower metal layer and an upper metal layer disposed over the lower metal layer. a bottom electrode is disposed over and in electrical contact with the lower metal layer. a magnetic tunneling junction (mtj) is disposed over an upper surface of bottom electrode. a top electrode is disposed over an upper surface of the mtj. a sidewall spacer surrounds an outer periphery of the top electrode. less than an entirety of a top electrode surface is in direct electrical contact with a metal via connected to the upper metal layer.
