Taiwan semiconductor manufacturing company, ltd. (20240381669). SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR simplified abstract

SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ken-Ichi Goto of Hsin-Chu (TW)

Chung-Te Lin of Tainan City (TW)

Mauricio Manfrini of Zhubei City (TW)

SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381669 titled 'SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR

The present disclosure pertains to a memory device in certain embodiments. The memory device includes a substrate and a lower interconnect metal layer positioned over the substrate. A selecting transistor is placed over the lower interconnect metal layer. A memory cell is situated over the selecting transistor and consists of a bottom electrode connected to the selecting transistor, a data storage structure above the bottom electrode, and a top electrode above the data storage structure.

• Memory device with substrate, lower interconnect metal layer, selecting transistor, and memory cell.
• Memory cell comprises bottom electrode, data storage structure, and top electrode.
• Data storage structure is positioned over the bottom electrode.
• Selecting transistor is located over the lower interconnect metal layer.
• Bottom electrode is electrically connected to the selecting transistor.

Potential Applications: - This technology can be utilized in various electronic devices requiring memory storage. - It can be integrated into computer systems, smartphones, and other consumer electronics. - The memory device can enhance the performance and storage capacity of electronic devices.

Problems Solved: - Provides a compact and efficient memory storage solution. - Enhances data storage capabilities in electronic devices. - Improves overall performance and speed of electronic devices.

Benefits: - Increased data storage capacity. - Enhanced performance and speed of electronic devices. - Compact and efficient memory storage solution.

Commercial Applications: Title: Innovative Memory Device for Enhanced Data Storage This technology can be commercially applied in the production of electronic devices such as smartphones, computers, and tablets. It can significantly improve the data storage capacity and performance of these devices, leading to enhanced user experience and satisfaction.

Questions about Memory Devices: 1. How does this memory device compare to traditional memory storage solutions? This memory device offers a more compact and efficient storage solution compared to traditional methods, enhancing data storage capabilities in electronic devices.

2. What are the potential market implications of implementing this memory device in consumer electronics? By integrating this memory device into consumer electronics, manufacturers can offer devices with increased data storage capacity and improved performance, potentially leading to higher customer satisfaction and market competitiveness.

Original Abstract Submitted

the present disclosure, in some embodiments, relates to a memory device. in some embodiments, the memory device comprises a substrate and a lower interconnect metal layer disposed over the substrate. a selecting transistor is disposed over the lower interconnect metal layer. a memory cell is disposed over the selecting transistor and comprises a bottom electrode electrically connected to the selecting transistor, a data storage structure disposed over the bottom electrode, and a top electrode disposed over the data storage structure.