Taiwan semiconductor manufacturing company, ltd. (20240381668). Semiconductor MRAM Device and Method simplified abstract
Contents
Semiconductor MRAM Device and Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shy-Jay Lin of Jhudong Township (TW)
Hiroki Noguchi of Hsinchu (TW)
Semiconductor MRAM Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381668 titled 'Semiconductor MRAM Device and Method
The method described in the patent application involves several steps to create a device with specific functionalities:
- Depositing a first dielectric layer over a semiconductor substrate
- Depositing a first electrode layer over the first dielectric layer
- Etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode
- Depositing a spin orbit torque (SOT) material on the first electrode and the second electrode
- Depositing magnetic tunnel junction (MTJ) layers on the SOT material
- Depositing a second electrode layer on the MTJ layers
- Etching the SOT material to form a SOT layer extending from the first electrode to the second electrode
- Etching the MTJ layers to form an MTJ stack on the SOT layer
- Etching the second electrode layer to form a top electrode on the MTJ stack
This method allows for the creation of a specific device structure with unique properties and functionalities.
Potential Applications: - Memory devices - Magnetic sensors - Spintronic devices
Problems Solved: - Enhancing device performance - Increasing data storage capacity - Improving energy efficiency
Benefits: - Higher data storage density - Faster data processing speeds - Lower power consumption
Commercial Applications: Title: Advanced Spintronic Memory Devices for Next-Generation Electronics Description: This technology can be utilized in the development of memory devices for various electronic applications, including data storage, sensors, and computing systems. The market implications include improved performance and efficiency in electronic devices.
Prior Art: Researchers can explore prior art related to spintronic devices, memory technologies, and semiconductor fabrication processes to understand the background and evolution of this technology.
Frequently Updated Research: Researchers are continuously exploring new materials and fabrication techniques to enhance the performance and capabilities of spintronic devices. Stay updated on the latest advancements in spintronics research for potential future applications.
Questions about Spintronic Memory Devices: 1. How does this technology compare to traditional memory devices in terms of performance and efficiency? 2. What are the key challenges in scaling up this technology for mass production and commercialization?
Original Abstract Submitted
a method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a spin orbit torque (sot) material on the first electrode and the second electrode, depositing magnetic tunnel junction (mtj) layers on the sot material, depositing a second electrode layer on the mtj layers, etching the sot material to form a sot layer extending from the first electrode to the second electrode, etching the mtj layers to form an mtj stack on the sot layer, and etching the second electrode layer to form a top electrode on the mtj stack.
