Taiwan semiconductor manufacturing company, ltd. (20240381667). EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR simplified abstract

EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Kuan-Liang Liu of Pingtung City (TW)

Sheng-Chau Chen of Tainan City (TW)

Chung-Liang Cheng of Changhua County (TW)

Chia-Shiung Tsai of Hsin-Chu (TW)

Yeong-Jyh Lin of Caotun Township (TW)

Pinyen Lin of Rochester NY (US)

Huang-Lin Chao of Hillsboro OR (US)

EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381667 titled 'EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR

The present disclosure pertains to an integrated chip with first and second transistors on a substrate. The first transistor has channel structures between source/drain regions, a gate electrode, and a protection layer. The second transistor also has channel structures, gate electrode, and protection layer, along with interconnect and contact plug structures.

• Integrated chip with first and second transistors on a substrate
• First transistor with channel structures, gate electrode, and protection layer
• Second transistor with channel structures, gate electrode, and protection layer
• First interconnect structure and contact plug structure on the chip

Potential Applications: - Semiconductor industry for advanced electronic devices - Integrated circuits for computing and communication systems

Problems Solved: - Enhanced performance and reliability of transistors - Improved integration of components on a chip

Benefits: - Higher efficiency in electronic devices - Increased functionality in compact designs

Commercial Applications: Title: Advanced Semiconductor Technology for Integrated Circuits This technology can be used in the development of high-performance electronic devices, leading to improved computing systems and communication networks. The market implications include increased demand for advanced semiconductor components in various industries.

Prior Art: Readers can explore prior patents related to integrated circuit design, semiconductor technology, and transistor structures to understand the evolution of this innovation.

Frequently Updated Research: Researchers are continuously studying ways to enhance transistor performance, optimize chip design, and improve semiconductor materials for future advancements in integrated circuit technology.

Questions about Integrated Chip Technology: 1. How does the integration of multiple transistors on a chip improve overall device performance? 2. What are the key factors influencing the design and fabrication of advanced semiconductor components?

Original Abstract Submitted

in some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. the first transistor includes first channel structures extending between first and second source/drain regions. a first gate electrode is arranged between the first channel structures, and a first protection layer is arranged over a topmost one of the first channel structures. the second transistor includes second channel structures extending between the second source/drain region and a third source/drain region. a second gate electrode is arranged between the second channel structures, and a second protection layer is arranged over a topmost one of the second channel structures. the integrated chip further includes a first interconnect structure arranged between the substrate and the first and second channel structures, and a contact plug structure coupled to the second source/drain region and arranged above the first and second gate electrodes.