Taiwan semiconductor manufacturing company, ltd. (20240381664). Ferroelectric Memory Device and Method of Manufacturing the Same simplified abstract

Ferroelectric Memory Device and Method of Manufacturing the Same

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi Yang Wei of Hsinchu (TW)

Tzu-Yu Lin of Hsinchu (TW)

Bi-Shen Lee of Hsinchu (TW)

Hai-Dang Trinh of Hsinchu (TW)

Hsing-Lien Lin of Hsin-Chu (TW)

Hsun-Chung Kuang of Hsinchu City (TW)

Ferroelectric Memory Device and Method of Manufacturing the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381664 titled 'Ferroelectric Memory Device and Method of Manufacturing the Same

Simplified Explanation

Ferroelectric stacks are described in this patent application to enhance the retention performance of ferroelectric memory devices. These stacks consist of a ferroelectric switching layer (FSL) sandwiched between two electrodes, with a barrier layer between the FSLs. The crystalline conditions of the barrier layer and FSLs differ, with the barrier layer typically being in an amorphous phase while the FSLs are in an orthorhombic phase. The FSLs are made of metal oxides, while the barrier layer is made of a different metal oxide. These ferroelectric stacks can be used in various memory devices for non-volatile data storage.

• The patent describes ferroelectric stacks with a unique structure to improve the retention performance of ferroelectric memory devices.
• The stacks include a ferroelectric switching layer (FSL) between electrodes, with a barrier layer separating the FSLs.
• The crystalline conditions of the barrier layer and FSLs are different, enhancing the overall performance of the memory device.
• The FSLs are typically made of metal oxides, while the barrier layer is made of a different metal oxide.
• These ferroelectric stacks can be utilized in various memory devices for non-volatile data storage.

Potential Applications

The technology described in this patent application can be applied in the following areas:

• Non-volatile memory devices
• Ferroelectric memory devices
• Data storage systems

Problems Solved

The technology addresses the following issues:

• Improving retention performance in ferroelectric memory devices
• Enhancing data storage capabilities
• Increasing the efficiency of memory devices

Benefits

The benefits of this technology include:

• Improved retention performance in ferroelectric memory devices
• Enhanced data storage capabilities
• Increased efficiency and reliability of memory devices

Commercial Applications

• Title: Enhanced Ferroelectric Memory Devices for Improved Data Storage
• This technology can be commercialized in the semiconductor industry for memory device manufacturing.
• It can be utilized in consumer electronics, data storage systems, and other electronic devices requiring non-volatile memory.

Questions about Ferroelectric Stacks

Question 1

What are the key components of ferroelectric stacks described in this patent application?

Answer

The key components include a ferroelectric switching layer (FSL), electrodes, and a barrier layer with specific crystalline conditions.

Question 2

How do ferroelectric stacks improve the retention performance of memory devices?

Answer

Ferroelectric stacks enhance retention performance by utilizing a unique structure with different crystalline conditions in the barrier layer and FSLs.

Original Abstract Submitted

ferroelectric stacks are disclosed herein that can improve retention performance of ferroelectric memory devices. an exemplary ferroelectric stack has a ferroelectric switching layer (fsl) stack disposed between a first electrode and a second electrode. the ferroelectric stack includes a barrier layer disposed between a first fsl and a second fsl, where a first crystalline condition of the barrier layer is different than a second crystalline condition of the first fsl and/or the second fsl. in some embodiments, the first crystalline condition is an amorphous phase, and the second crystalline condition is an orthorhombic phase. in some embodiments, the first fsl and/or the second fsl include a first metal oxide, and the barrier layer includes a second metal oxide. the ferroelectric stack can be a ferroelectric capacitor, a portion of a transistor, and/or connected to a transistor in a ferroelectric memory device to provide data storage in a non-volatile manner.