Taiwan semiconductor manufacturing company, ltd. (20240381663). INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE simplified abstract
Contents
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hai-Dang Trinh of Hsinchu (TW)
Hsun-Chung Kuang of Hsinchu City (TW)
Cheng-Yuan Tsai of Chu-Pei City (TW)
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381663 titled 'INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
The present disclosure pertains to an integrated chip with a lower electrode structure, interconnects, barrier, amorphous initiation layer, ferroelectric material, and upper electrode.
- Lower electrode structure is positioned over interconnects within a lower inter-level dielectric structure on a substrate.
- Barrier separates the lower electrode structure from the interconnects.
- Amorphous initiation layer is above the lower electrode structure.
- Ferroelectric material on the amorphous initiation layer has a uniform orthorhombic crystalline phase.
- Upper electrode is located over the ferroelectric material.
Potential Applications: - Memory storage devices - Sensor technology - Integrated circuits
Problems Solved: - Enhanced performance and reliability of integrated chips - Improved data storage capabilities
Benefits: - Increased data storage capacity - Higher efficiency in data processing - Improved overall performance of electronic devices
Commercial Applications: Title: Advanced Memory Storage Technology This technology can be utilized in the development of high-performance memory storage devices, leading to faster data processing speeds and improved reliability. The market implications include increased demand for efficient memory solutions in various industries such as consumer electronics, telecommunications, and automotive sectors.
Questions about Integrated Chip Technology: 1. How does the barrier in the integrated chip contribute to its functionality?
The barrier separates the lower electrode structure from the interconnects, preventing interference and ensuring proper functionality of the chip.
2. What role does the amorphous initiation layer play in the integrated chip?
The amorphous initiation layer serves as a foundation for the ferroelectric material, promoting a uniform crystalline phase for optimal performance.
Original Abstract Submitted
in some embodiments, the present disclosure relates to an integrated chip. the integrated chip includes a lower electrode structure disposed over one or more interconnects. the one or more interconnects are arranged within a lower inter-level dielectric (ild) structure over a substrate. a barrier is arranged along a lower surface of the lower electrode structure. the barrier separates the lower electrode structure from the one or more interconnects. an amorphous initiation layer is over the lower electrode structure and a ferroelectric material is on the amorphous initiation layer. the ferroelectric material has a substantially uniform orthorhombic crystalline phase. an upper electrode is over the ferroelectric material.
