Taiwan semiconductor manufacturing company, ltd. (20240381662). FERROELECTRIC MEMORY DEVICE COMPRISING A CHIMNEY SEED STRUCTURE simplified abstract
Contents
FERROELECTRIC MEMORY DEVICE COMPRISING A CHIMNEY SEED STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuen-Yi Chen of Hsinchu City (TW)
Yi-Hsuan Chen of Taoyuan City (TW)
Kuo-Ching Huang of Hsinchu City (TW)
FERROELECTRIC MEMORY DEVICE COMPRISING A CHIMNEY SEED STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381662 titled 'FERROELECTRIC MEMORY DEVICE COMPRISING A CHIMNEY SEED STRUCTURE
Simplified Explanation: The patent application describes a ferroelectric memory device with a chimney seed structure that enables the ferroelectric layer to achieve a large remanent polarization with a small thickness, improving read speeds and reliability.
- The device includes a bottom electrode layer, a ferroelectric layer, and a top electrode layer forming memory cells.
- A dielectric wall segments the top electrode layer into individual top electrodes for each memory cell.
- The chimney seed structure seeds ferroelectric crystalline growth in the ferroelectric layer, allowing for a large remanent polarization with a small thickness.
Key Features and Innovation:
- Chimney seed structure for ferroelectric memory device
- Large remanent polarization with small thickness
- Improved read speeds and reliability
Potential Applications:
- Memory storage devices
- Data processing systems
- Consumer electronics
Problems Solved:
- Slow read speeds in traditional memory devices
- Limited reliability due to small remanent polarization
Benefits:
- Faster read speeds
- Increased reliability
- Enhanced memory performance
Commercial Applications: Potential commercial applications include memory storage devices for various industries, data processing systems for improved efficiency, and consumer electronics for enhanced performance.
Prior Art: Prior research on ferroelectric memory devices and structures could provide insights into similar technologies and advancements in the field.
Frequently Updated Research: Stay updated on advancements in ferroelectric materials, memory device technologies, and semiconductor manufacturing processes for potential improvements in the chimney seed structure design.
Questions about Ferroelectric Memory Devices: 1. How does the chimney seed structure improve the performance of ferroelectric memory devices? 2. What are the key advantages of using a dielectric wall in segmenting the top electrode layer?
Original Abstract Submitted
various embodiments of the present disclosure are directed towards a ferroelectric memory device comprising a chimney seed structure. a ferroelectric layer overlies a bottom electrode layer, and a top electrode layer overlies the ferroelectric layer. the top electrode layer, the ferroelectric layer, and the bottom electrode layer form a plurality of memory cells, and a dielectric wall extends through the top electrode layer and segments the top electrode layer into a plurality top electrodes individual to the memory cells. the chimney seed structure underlies the ferroelectric layer and extends through the bottom electrode layer from the ferroelectric layer. the chimney seed structure is configured to seed ferroelectric crystalline growth in the ferroelectric layer to allow the ferroelectric layer to achieve a large remanent polarization with a small thickness. the small thickness increases read speeds, while the large remanent polarization increases a read window and hence reliability.
