Taiwan semiconductor manufacturing company, ltd. (20240381656). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
Contents
THREE-DIMENSIONAL MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chung-Te Lin of Tainan City (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Sheng-Chen Wang of Hsinchu (TW)
THREE-DIMENSIONAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381656 titled 'THREE-DIMENSIONAL MEMORY DEVICES
The abstract describes a device with multiple layers including dielectric layers, word lines, bit lines, and data storage strips for data storage applications.
- Device includes a first dielectric layer, a word line with a main layer and glue layer, a second dielectric layer, a first bit line, and a data storage strip.
- The first glue layer extends along the bottom surface, top surface, and first sidewall of the word line.
- The first bit line extends through the second dielectric layer and the first dielectric layer.
- The data storage strip is positioned between the first bit line and the word line, extending along the second sidewall of the word line.
Potential Applications: - Data storage devices - Memory modules - Semiconductor industry
Problems Solved: - Efficient data storage - Improved memory performance - Enhanced device reliability
Benefits: - Increased data storage capacity - Faster data access - Enhanced device durability
Commercial Applications: Title: Advanced Data Storage Devices for Enhanced Memory Performance This technology can be used in various commercial applications such as: - Solid-state drives - Memory cards - Embedded systems
Questions about the Technology: 1. How does the positioning of the data storage strip between the bit line and word line improve data storage efficiency? 2. What are the potential implications of this technology on the semiconductor industry?
Frequently Updated Research: Stay updated on the latest advancements in data storage technology and semiconductor devices to enhance memory performance and storage capacity.
Original Abstract Submitted
in an embodiment, a device includes: a first dielectric layer over a substrate; a word line over the first dielectric layer, the word line including a first main layer and a first glue layer, the first glue layer extending along a bottom surface, a top surface, and a first sidewall of the first main layer; a second dielectric layer over the word line; a first bit line extending through the second dielectric layer and the first dielectric layer; and a data storage strip disposed between the first bit line and the word line, the data storage strip extending along a second sidewall of the word line.
