Taiwan semiconductor manufacturing company, ltd. (20240381654). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Chieh Lu of Taipei City (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chih-Yu Chang of New Taipei City (TW)
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381654 titled 'FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
The present disclosure pertains to an integrated chip structure with a multi-layer stack on a substrate, including conductive and dielectric layers, a channel layer, a ferroelectric material, and oxygen scavenging layers.
- Integrated chip structure with multi-layer stack
- Conductive and dielectric layers interleaved
- Channel layer and ferroelectric material included
- Oxygen scavenging layers below conductive layers
- Oxygen scavenger layers confined below dielectric layers
Potential Applications: - Advanced semiconductor devices - Memory storage technology - High-performance computing systems
Problems Solved: - Enhanced performance and reliability of integrated chips - Improved data storage capabilities - Increased efficiency in electronic devices
Benefits: - Higher data processing speeds - Reduced power consumption - Extended lifespan of integrated chips
Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Electronics This technology can be utilized in the development of cutting-edge electronic devices, such as smartphones, tablets, and computers, to improve their performance and efficiency in data processing.
Questions about Integrated Chip Structure: 1. How does the ferroelectric material contribute to the functionality of the integrated chip structure?
- The ferroelectric material helps in storing and retaining data in the chip, enhancing its memory capabilities.
2. What is the significance of the oxygen scavenging layers in the integrated chip structure?
- The oxygen scavenging layers prevent oxidation of the conductive layers, ensuring long-term stability and reliability of the chip.
Original Abstract Submitted
the present disclosure, in some embodiments, relates to an integrated chip structure. the integrated chip structure includes a multi-layer stack disposed on a substrate and having a plurality of conductive layers interleaved between a plurality of dielectric layers. a channel layer is arranged along a side of the multi-layer stack. a ferroelectric material is arranged between the channel layer and the side of the multi-layer stack. a plurality of oxygen scavenging layers are respectively arranged between the ferroelectric material and sidewalls of the plurality of conductive layers. the plurality of oxygen scavenger layers are entirely confined below the plurality of dielectric layers.
