Taiwan semiconductor manufacturing company, ltd. (20240381653). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract

MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chao-I Wu of Hsinchu County (TW)

Yu-Ming Lin of Hsinchu City (TW)

Sai-Hooi Yeong of Hsinchu County (TW)

MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381653 titled 'MEMORY DEVICE AND METHOD OF FORMING THE SAME

The memory device described in the abstract includes a substrate, a layer stack, and a plurality of composite pillar structures. The layer stack, consisting of conductive and dielectric layers stacked alternately, is placed on the substrate. The composite pillar structures penetrate through the layer stack, each comprising a dielectric pillar, a pair of conductive pillars, a channel layer, a ferroelectric layer, and a buffer layer.

• Dielectric and conductive layers are stacked alternately in the layer stack.
• Composite pillar structures penetrate through the layer stack.
• Each composite pillar structure includes a dielectric pillar, a pair of conductive pillars, a channel layer, a ferroelectric layer, and a buffer layer.
• The conductive pillars are electrically isolated from each other through a portion of the dielectric pillar.
• The ferroelectric layer is disposed between the channel layer and the layer stack.

Potential Applications: - Non-volatile memory devices - High-density data storage - Advanced computing systems

Problems Solved: - Enhanced memory storage capacity - Improved data retention and retrieval - Increased device performance and efficiency

Benefits: - Higher data storage density - Faster data access speeds - Enhanced overall device performance

Commercial Applications: Title: Advanced Non-Volatile Memory Devices for High-Performance Computing This technology can be utilized in: - Data centers - Artificial intelligence systems - High-speed computing applications

Questions about the technology: 1. How does the composite pillar structure improve memory device performance? 2. What are the advantages of using a ferroelectric layer in the memory device design?

Original Abstract Submitted

provided are a memory device and a method of forming the same. the memory device includes a substrate, a layer stack, and a plurality of composite pillar structures. the layer stack is disposed on the substrate. the layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. the composite pillar structures respectively penetrate through the layer stack. each composite pillar structure includes a dielectric pillar; a pair of conductive pillars penetrating through the dielectric pillar and electrically isolated from each other through a portion of the dielectric pillar; a channel layer covering both sides of the dielectric pillar and the pair of conductive pillars; a ferroelectric layer disposed between the channel layer and the layer stack; and a buffer layer disposed between the channel layer and the ferroelectric layer.