Taiwan semiconductor manufacturing company, ltd. (20240381652). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS simplified abstract
Contents
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Chen Wang of Hsinchu (TW)
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381652 titled 'THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
The abstract describes a device with a unique structure involving different conductive materials and a memory film.
- The device includes a first word line with a first conductive material, a first bit line intersecting the word line, and a memory film between them.
- A conductive spacer with a second conductive material and different work function than the first material is placed between the memory film and word line.
- The first conductive material has lower resistivity than the second material.
Potential Applications: - This technology could be used in memory storage devices, such as non-volatile memory. - It may also have applications in integrated circuits and semiconductor devices.
Problems Solved: - The device addresses the need for efficient and reliable memory storage solutions. - It offers a way to enhance the performance of memory devices.
Benefits: - Improved conductivity and efficiency in memory devices. - Enhanced data storage capabilities. - Potential for smaller and more powerful electronic devices.
Commercial Applications: Title: Innovative Memory Device Technology for Enhanced Data Storage This technology could revolutionize the memory storage industry by providing more efficient and reliable solutions for various electronic devices. It has the potential to be widely adopted in the production of memory chips and integrated circuits, leading to advancements in data storage capabilities across multiple industries.
Questions about Innovative Memory Device Technology: 1. How does the use of different conductive materials in the device impact its performance? - The use of different conductive materials allows for improved conductivity and efficiency in the device, enhancing its overall performance. 2. What are the potential implications of this technology in the semiconductor industry? - This technology could lead to significant advancements in the semiconductor industry by offering more efficient and reliable memory storage solutions.
Original Abstract Submitted
in an embodiment, a device includes: a first word line over a substrate, the first word line including a first conductive material; a first bit line intersecting the first word line; a first memory film between the first bit line and the first word line; and a first conductive spacer between the first memory film and the first word line, the first conductive spacer including a second conductive material, the second conductive material having a different work function than the first conductive material, the first conductive material having a lower resistivity than the second conductive material.
