Taiwan semiconductor manufacturing company, ltd. (20240381651). Semiconductor Memory Structures And Method Of Forming The Same simplified abstract
Contents
Semiconductor Memory Structures And Method Of Forming The Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hung-Chang Sun of Kaohsiung City (TW)
Sheng-Chih Lai of Hsinchu County (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Chung-Te Lin of Tainan City (TW)
Semiconductor Memory Structures And Method Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381651 titled 'Semiconductor Memory Structures And Method Of Forming The Same
The semiconductor memory structure described in the abstract includes a ferroelectric layer, a channel layer, a source structure, a drain structure, and a first isolation structure.
- The structure features a ferroelectric layer and a channel layer stacked on top of each other.
- A source structure and a drain structure are formed over the channel layer.
- A first isolation structure is positioned between the source structure and the drain structure.
- The source structure extends over the cap layer towards the drain structure.
Potential Applications: - This technology could be used in non-volatile memory applications. - It may find applications in high-speed data storage devices.
Problems Solved: - Addresses the need for reliable and fast memory storage solutions. - Provides a structure that can retain data without power.
Benefits: - Improved data retention capabilities. - Faster data access speeds. - Enhanced reliability in memory storage.
Commercial Applications: Title: Semiconductor Memory Structure for High-Speed Data Storage This technology could be utilized in consumer electronics, data centers, and other applications requiring high-speed and reliable memory storage solutions.
Questions about Semiconductor Memory Structure for High-Speed Data Storage: 1. How does the ferroelectric layer contribute to the performance of the memory structure? The ferroelectric layer enhances the data retention capabilities of the memory structure by allowing it to retain data without the need for power. 2. What are the potential advantages of using a first isolation structure in this semiconductor memory design? The first isolation structure helps in preventing interference between the source and drain structures, improving the overall performance and reliability of the memory device.
Original Abstract Submitted
a semiconductor memory structure includes a ferroelectric layer and a channel layer formed over the ferroelectric layer. the structure also includes a source structure and a drain structure formed over the channel layer. the structure further includes a first isolation structure formed between the source structure and the drain structure. the source structure extends over the cap layer and towards the drain structure.
