Taiwan semiconductor manufacturing company, ltd. (20240381649). METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE simplified abstract

METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Sheng-Chih Lai of Hsinchu County (TW)

Chung-Te Lin of Tainan City (TW)

METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381649 titled 'METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation:

This patent application describes a method for forming a semiconductor memory device by creating a structure with alternating active and insulating layers, etching the structure to form a trench, and then forming a gate structure within the trench. The gate structure is then etched to create openings, resulting in multiple isolated gate lines.

• The method involves stacking active and insulating layers over an interconnect structure.
• The stacked layers are etched to create a trench.
• A gate structure is formed within the trench.
• The gate structure is further etched to create isolated gate lines.
• The gate lines are physically and electrically separated from each other.

Potential Applications: This technology can be applied in the manufacturing of semiconductor memory devices, such as flash memory, DRAM, and SRAM.

Problems Solved: This method addresses the need for efficient and reliable semiconductor memory devices with isolated gate lines for improved performance.

Benefits: - Enhanced performance of semiconductor memory devices. - Improved reliability and durability. - Simplified manufacturing process.

Commercial Applications: Title: Semiconductor Memory Device Manufacturing Method This technology can be utilized in the production of various semiconductor memory devices, catering to industries such as electronics, telecommunications, and computing.

Prior Art: Readers can explore prior art related to semiconductor memory device manufacturing methods in academic journals, patent databases, and industry publications.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory device manufacturing methods through industry conferences, research papers, and collaborations with experts in the field.

Questions about Semiconductor Memory Device Manufacturing Method: 1. What are the key advantages of using isolated gate lines in semiconductor memory devices? 2. How does this method contribute to the overall performance and reliability of semiconductor memory devices?

Original Abstract Submitted

a method for forming a semiconductor memory device is provided. the method includes forming a stack of alternatingly stacking active layers and insulating layers over an interconnect structure, etching the stack to form a trench, forming a gate structure in the trench, and etching the gate structure to form openings. the gate structure is cut into plurality of gate lines which are physically and electrically isolated from each other.