Taiwan semiconductor manufacturing company, ltd. (20240381632). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Te-An Chen of Beitun District (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381632 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation: The patent application describes a method of manufacturing a semiconductor device where a memory cell structure is formed in a memory cell area of a substrate, covered by a protective layer. A mask pattern is used to create openings over specific areas, allowing for the formation of different components on the substrate.
- A memory cell structure covered by a protective layer is formed in a memory cell area of a substrate.
- A mask pattern is used to create openings over specific areas on the substrate.
- Different components, such as field effect transistors, are formed in different areas based on the mask pattern.
- The method allows for precise and controlled manufacturing of semiconductor devices.
Key Features and Innovation:
- Formation of memory cell structure covered by protective layer.
- Use of mask pattern to define different areas on the substrate.
- Formation of field effect transistors in specific areas based on the mask pattern.
Potential Applications: This technology can be applied in the manufacturing of various semiconductor devices, including memory chips, processors, and other integrated circuits.
Problems Solved: This method addresses the need for precise and controlled manufacturing processes in semiconductor device production.
Benefits:
- Improved efficiency in manufacturing semiconductor devices.
- Enhanced precision in component placement on the substrate.
- Increased reliability of the final semiconductor products.
Commercial Applications: The technology can be utilized in the production of memory chips, processors, and other semiconductor devices, catering to the growing demand for advanced electronics in various industries.
Prior Art: Readers can explore prior research on semiconductor device manufacturing methods, memory cell structures, and field effect transistors to gain a deeper understanding of the existing knowledge in the field.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage cutting-edge technologies in manufacturing processes.
Questions about Semiconductor Device Manufacturing: 1. How does the use of a protective layer in memory cell structures improve the reliability of semiconductor devices? 2. What are the key considerations in choosing the materials for gate dielectric layers in field effect transistors?
Original Abstract Submitted
in a method of manufacturing a semiconductor device, a memory cell structure covered by a protective layer is formed in a memory cell area of a substrate. a mask pattern is formed. the mask pattern has an opening over a first circuit area, while the memory cell area and a second circuit area are covered by the mask pattern. the substrate in the first circuit area is recessed, while the memory cell area and the second circuit area are protected. a first field effect transistor (fet) having a first gate dielectric layer is formed in the first circuit area over the recessed substrate and a second fet having a second gate dielectric layer is formed in the second circuit area over the substrate as viewed in cross section.
