Taiwan semiconductor manufacturing company, ltd. (20240381630). 3D NOR TYPE MEMORY ARRAY WITH WIDER SOURCE/DRAIN CONDUCTIVE LINES simplified abstract
Contents
3D NOR TYPE MEMORY ARRAY WITH WIDER SOURCE/DRAIN CONDUCTIVE LINES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Chih Lai of Hsinchu (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Chung-Te Lin of Tainan City (TW)
3D NOR TYPE MEMORY ARRAY WITH WIDER SOURCE/DRAIN CONDUCTIVE LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381630 titled '3D NOR TYPE MEMORY ARRAY WITH WIDER SOURCE/DRAIN CONDUCTIVE LINES
The patent application relates to a memory device with gate electrode layers over a substrate, a first memory cell with source/drain conductive lines extending through the gate electrode layers, a barrier structure between the conductive lines, a channel layer on the outermost sidewalls of the conductive lines, a dielectric layer between the barrier structure and the channel layer, and a memory layer on the sidewalls of the channel layer.
- Gate electrode layers over a substrate
- Source/drain conductive lines extending through the gate electrode layers
- Barrier structure between the conductive lines
- Channel layer on the outermost sidewalls of the conductive lines
- Dielectric layer between the barrier structure and the channel layer
- Memory layer on the sidewalls of the channel layer
Potential Applications: - Memory devices - Semiconductor industry - Electronics manufacturing
Problems Solved: - Enhanced memory device performance - Improved data storage capabilities - Increased efficiency in semiconductor technology
Benefits: - Higher memory capacity - Faster data access speeds - Enhanced overall device performance
Commercial Applications: Title: Advanced Memory Devices for Improved Data Storage This technology can be utilized in various memory devices, leading to faster and more efficient data storage solutions. The market implications include increased demand for high-performance memory devices in the semiconductor industry.
Prior Art: Readers can explore prior patents related to memory devices, gate electrode layers, and semiconductor technology to understand the evolution of this innovation.
Frequently Updated Research: Stay updated on the latest advancements in memory device technology, gate electrode structures, and semiconductor manufacturing processes to enhance the performance of memory devices.
Questions about Memory Devices: 1. How do gate electrode layers contribute to the performance of memory devices? Gate electrode layers play a crucial role in controlling the flow of electrical signals within memory devices, enhancing their overall efficiency and reliability.
2. What are the key factors influencing the design of source/drain conductive lines in memory devices? The design of source/drain conductive lines is influenced by factors such as signal transmission speed, power consumption, and overall device performance.
Original Abstract Submitted
in some embodiments, the present disclosure relates to a memory device that includes gate electrode layers arranged over a substrate. a first memory cell is arranged over the substrate and includes first and second source/drain conductive lines that extend through the gate electrode layers. a barrier structure is arranged between the first and second source/drain conductive lines. a channel layer is arranged on outermost sidewalls of the first and second source/drain conductive lines. a first dielectric layer is arranged between the barrier structure and the channel layer. a memory layer is arranged on sidewalls of the channel layer. the first dielectric layer has a first maximum width measured between outermost sidewalls of the first dielectric layer. the first source/drain conductive line has a second maximum width measured between the outermost sidewalls of the first source/drain conductive line. the second width is greater than the first width.
