Taiwan semiconductor manufacturing company, ltd. (20240381621). CAPACITOR, MEMORY DEVICE, AND METHOD simplified abstract
Contents
CAPACITOR, MEMORY DEVICE, AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chung-Liang Cheng of Hsinchu (TW)
CAPACITOR, MEMORY DEVICE, AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381621 titled 'CAPACITOR, MEMORY DEVICE, AND METHOD
The abstract of the patent application describes a device with a substrate, two nanostructures (one semiconductor and one conductor), and gate structures wrapped around each nanostructure.
- The device includes a substrate.
- A first nanostructure with a semiconductor and a first resistance is over the substrate.
- A second nanostructure with a conductor and a lower second resistance is laterally offset from the first nanostructure.
- Both nanostructures are at the same height above the substrate.
- A first gate structure wraps around the first nanostructure.
- A second gate structure wraps around the second nanostructure.
Potential Applications: - Nanoelectronics - Quantum computing - Sensor technology
Problems Solved: - Improving conductivity in nanostructures - Enhancing gate control in nanodevices
Benefits: - Increased efficiency in electronic devices - Enhanced performance in nanotechnology applications
Commercial Applications: - Semiconductor industry - Electronics manufacturing - Research and development in nanotechnology
Questions about the Technology: 1. How does the device improve conductivity in nanostructures? 2. What are the potential implications of this technology in quantum computing?
Frequently Updated Research: - Ongoing studies on nanostructure conductivity - Advancements in gate control technology in nanodevices
Original Abstract Submitted
a device includes a substrate. a first nanostructure is over the substrate, and includes a semiconductor having a first resistance. a second nanostructure is over the substrate, is offset laterally from the first nanostructure, is at about the same height above the substrate as the first nanostructure, and includes a conductor having a second resistance lower than the first resistance. a first gate structure is over and wrapped around the first nanostructure, and a second gate structure is over and wrapped around the second nanostructure.
