Taiwan semiconductor manufacturing company, ltd. (20240381612). THREE-PORT SRAM CELL AND LAYOUT METHOD simplified abstract

THREE-PORT SRAM CELL AND LAYOUT METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

THREE-PORT SRAM CELL AND LAYOUT METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381612 titled 'THREE-PORT SRAM CELL AND LAYOUT METHOD

Simplified Explanation: This patent application describes semiconductor devices with specific circuit configurations for write and read functions, utilizing different word lines and bit lines in different metallization layers.

• The write port circuit performs a write function based on the write word line, first write bit line, and second write bit line.
• The first read port circuit executes a first read function using the first read bit line and the first read word line.
• The second read port circuit carries out a second read function with the second read bit line and the second read word line.
• The gate structures of the write pass-gate transistors are connected to a write word line landing pad, which is linked to the write word line.
• The first and second read bit lines, along with the write word line landing pad, extend in the first direction in a metallization layer.
• The write word line extends in the second direction in a different metallization layer.

Potential Applications: 1. Memory devices 2. Data storage systems 3. Integrated circuits

Problems Solved: 1. Efficient data writing and reading processes 2. Improved circuit performance 3. Enhanced memory functionality

Benefits: 1. Faster data access 2. Higher data transfer speeds 3. Increased reliability

Commercial Applications: The technology can be utilized in the development of advanced memory modules for various electronic devices, enhancing their performance and storage capabilities.

Prior Art: Researchers can explore prior patents related to semiconductor memory devices and circuit configurations to understand the evolution of this technology.

Frequently Updated Research: Stay updated on advancements in semiconductor memory technology, circuit design, and data storage systems to leverage the latest innovations in the field.

Questions about Semiconductor Devices: 1. How do these semiconductor devices improve data storage efficiency? 2. What are the potential implications of using different metallization layers in circuit configurations?

Original Abstract Submitted

semiconductor devices are provided. a write port circuit is configured to perform a write function according to the write word line and the first and second write bit lines. the first read port circuit is configured to perform first read function according to the first read bit line and the first read word line. the second read port circuit is configured to perform second read function according to the second read bit line and the second read word line. the first and second gate structures of the first and second write pass-gate transistors are connected to a write word line landing pad that is connected to the write word line. the first and second read bit lines and the write word line landing pad extend in the first direction in a first metallization layer. the write word line extends in a second direction in a second metallization layer.