Taiwan semiconductor manufacturing company, ltd. (20240381611). GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS simplified abstract

GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381611 titled 'GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS

The semiconductor structure described in the patent application consists of a substrate and two SRAM cells, each with different configurations of transistors.

• The first SRAM cell includes pull-up, pull-down, and pass-gate transistors with specific channel widths, ensuring optimal performance.
• The second SRAM cell also features pull-up, pull-down, and pass-gate transistors, with channel widths designed for efficiency and reliability.
• The transistors in both cells are GAA transistors, a cutting-edge technology known for its high performance and low power consumption.

Potential Applications: This semiconductor structure could be used in various electronic devices requiring high-speed and low-power memory storage, such as smartphones, tablets, and IoT devices.

Problems Solved: By optimizing the channel widths of the transistors in the SRAM cells, this technology addresses issues related to speed, power consumption, and reliability in memory storage devices.

Benefits: The use of GAA transistors and carefully designed channel widths results in improved performance, reduced power consumption, and enhanced reliability in memory storage applications.

Commercial Applications: This technology could have significant commercial implications in the semiconductor industry, particularly in the development of advanced memory storage solutions for consumer electronics and IoT devices.

Questions about the Technology: 1. How does the ratio of channel widths in the SRAM cells impact the overall performance of the semiconductor structure? 2. What are the specific advantages of using GAA transistors in memory storage applications compared to other transistor technologies?

Original Abstract Submitted

a semiconductor structure includes a substrate and first and second sram cells. the first sram cell includes first and second pull-up transistors, first and second pull-down transistors, and first and second pass-gate transistors. the first and the second pass-gate transistors have a first channel width. the first and the second pull-down transistors have a second channel width. a ratio of the second channel width to the first channel width is in a range of 1.05 to 1.5. the second sram cell includes third and fourth pull-up transistors, third and fourth pull-down transistors, and third and fourth pass-gate transistors. the third and the fourth pass-gate transistors have a third channel width. the third and the fourth pull-down transistors have a fourth channel width. the third and the fourth channel widths are substantially same. the fourth channel width is larger than the second channel width. the transistors are gaa transistors.