Taiwan semiconductor manufacturing company, ltd. (20240381610). INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Yin Wang of Taipei City (TW)
Wei-Xiang You of Kaohsiung City (TW)
Kao-Cheng Lin of Taipei City (TW)
Jui-Chien Huang of Hsinchu City (TW)
Szuya Liao of Hsinchu County (TW)
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381610 titled 'INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
The abstract describes a patent application involving two semiconductor layers, with source/drain epitaxial features on each side of the layers. The features have different conductive types.
- The patent involves a structure with two vertically spaced semiconductor layers.
- Source/drain epitaxial features are located on the sides of each layer.
- The first, third, and fourth features have a first conductive type, while the second feature has a second conductive type.
- The layers are arranged in a specific configuration to optimize performance.
- This innovation aims to improve the efficiency and functionality of semiconductor devices.
Potential Applications: - This technology could be applied in the development of advanced electronic devices. - It may find use in the manufacturing of high-performance integrated circuits.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a more optimized structure for electronic components.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced efficiency in electronic circuits.
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Electronic Devices This technology could be utilized in the production of cutting-edge electronic devices, catering to industries such as telecommunications, computing, and consumer electronics. The market implications include the potential for more advanced and efficient electronic products.
Questions about the Technology: 1. How does this semiconductor structure differ from traditional designs?
- This semiconductor structure features vertically spaced layers with specific conductive types in the source/drain epitaxial features, optimizing performance.
2. What potential impact could this technology have on the semiconductor industry?
- This technology could lead to the development of more efficient and high-performance semiconductor devices, impacting various industries that rely on electronic components.
Original Abstract Submitted
the first semiconductor layer and the second semiconductor layer are above the first semiconductor layer, in which the first and second semiconductor layers are vertically spaced apart from each other. the first and second source/drain epitaxial features are respectively on first and second sides of the first semiconductor layer. the third and fourth source/drain epitaxial features are respectively on first and second sides of the second semiconductor layer and above the first source/drain epitaxial feature. the first, third, and fourth source/drain epitaxial features have a first conductive type, and the second source/drain epitaxial feature has a second conductive type opposite to the first conductive type.
