Taiwan semiconductor manufacturing company, ltd. (20240381608). MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE simplified abstract

MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Yu Hsu of Hsinchu County (TW)

Jian-Hao Chen of Hsinchu City (TW)

Chia-Wei Chen of Hsinchu (TW)

Shan-Mei Liao of Hsinchu (TW)

Hui-Chi Chen of Hsinchu County (TW)

Yu-Chia Liang of Hsinchu (TW)

Shih-Hao Lin of Hsinchu (TW)

Kuei-Lun Lin of Hsinchu (TW)

Kuo-Feng Yu of Hsinchu County (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381608 titled 'MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE

The abstract of the patent application describes a transistor with a gate structure consisting of two dielectric layers with different dielectric constants, one greater than the other, both higher than that of silicon oxide.

• Simplified Explanation:

- A transistor has a gate structure with two dielectric layers. - The dielectric constants of the layers are different, with the second layer having a higher value. - Both dielectric constants are greater than that of silicon oxide.

• Key Features and Innovation:

- Two dielectric layers in the gate structure. - Different dielectric constants for each layer. - Higher dielectric constant for the second layer. - Dielectric constants greater than silicon oxide.

• Potential Applications:

- Advanced semiconductor devices. - High-performance transistors. - Improved electronic devices.

• Problems Solved:

- Enhancing transistor performance. - Increasing efficiency of electronic components. - Reducing power consumption.

• Benefits:

- Improved speed and reliability of transistors. - Enhanced overall performance of electronic devices. - Potential for energy savings.

• Commercial Applications:

- Semiconductor industry for manufacturing high-performance devices. - Electronics sector for improving product efficiency. - Research and development for cutting-edge technology advancements.

• Questions about Transistors with Dual Dielectric Layers:

1. How do the dielectric constants of the layers impact transistor performance? 2. What are the potential drawbacks of using dual dielectric layers in transistors?

• Frequently Updated Research:

- Ongoing studies on optimizing dielectric materials for transistor applications. - Research on the impact of dielectric constants on semiconductor device performance.

Original Abstract Submitted

a transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. the first gate dielectric layer is disposed over the substrate. the first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. the second gate dielectric layer is disposed over the first gate dielectric layer. the second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. the second dielectric constant is greater than the first dielectric constant. the first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.