Taiwan semiconductor manufacturing company, ltd. (20240381607). Multi-Gate Field-Effect Transistors In Integrated Circuits simplified abstract

Multi-Gate Field-Effect Transistors In Integrated Circuits

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

Multi-Gate Field-Effect Transistors In Integrated Circuits - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381607 titled 'Multi-Gate Field-Effect Transistors In Integrated Circuits

The semiconductor structure described in the abstract includes two active regions, each containing a transistor with specific components.

• The first active region consists of a first transistor with a first channel region, first source/drain terminal, and first epitaxial source/drain feature.
• The second active region contains a second transistor with a second channel region, second source/drain terminal, and second epitaxial source/drain feature.

These components have varying widths and are arranged in a specific configuration within the semiconductor structure.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits for computing and communication systems.

Problems Solved: - This technology addresses the need for improved performance and efficiency in semiconductor devices. - It offers a solution for enhancing the functionality and reliability of transistors in electronic devices.

Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and reliability of transistors. - Potential for the development of advanced electronic systems with higher capabilities.

Commercial Applications: Title: Advanced Semiconductor Technology for High-Performance Electronic Devices Description: This technology has the potential to revolutionize the semiconductor industry by enabling the production of cutting-edge electronic devices with superior performance and efficiency. It could be utilized in various commercial applications such as smartphones, computers, and networking equipment, leading to significant market implications.

Questions about Semiconductor Structure: 1. How does the configuration of the first and second active regions contribute to the overall performance of the semiconductor structure? 2. What are the specific advantages of using epitaxial source/drain features in the transistors of the semiconductor structure?

Original Abstract Submitted

a semiconductor structure includes a first active region and second active region extending lengthwise along a first direction. the first active region includes a first channel region of a first transistor and having a first channel width along a second direction perpendicular to the first direction, a first source/drain terminal of the first transistor and having a first width along the second direction and greater than the first channel width, and a first epitaxial source/drain feature of the first transistor and disposed over the first source/drain terminal. the second active region includes a second channel region of a second transistor and having a second channel width along the second direction, a second source/drain terminal of the second transistor and having a second width along the second direction and greater than the second channel width, and a second epitaxial source/drain feature of the second transistor and over the second source/drain terminal.