Taiwan semiconductor manufacturing company, ltd. (20240381606). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381606 titled 'SEMICONDUCTOR DEVICE

The abstract describes a semiconductor device with multiple memory cells, each consisting of various transistors and isolation transistors. The gates of the pass-gate transistors are connected to different landing pads, while the sources are connected to the bit lines. The VDD line, landing pads, and bit lines are formed in a metal layer, with the VDD line and bit lines being longer than the landing pads.

• Memory cells with pull-down, pass-gate, pull-up, and isolation transistors
• Common gate for isolation transistors connected to VDD line
• Pass-gate transistors connected to different landing pads
• Sources of pass-gate transistors connected to bit lines
• VDD line, landing pads, and bit lines formed in a metal layer

Potential Applications: - Memory storage in electronic devices - Integrated circuits in computing systems

Problems Solved: - Efficient memory cell design - Improved data storage and retrieval

Benefits: - Enhanced performance in semiconductor devices - Increased data processing speed

Commercial Applications: Title: "Advanced Memory Cell Technology for Semiconductor Devices" This technology can be used in: - Consumer electronics - Telecommunications - Automotive industry

Questions about the technology: 1. How does the design of the memory cells improve data storage efficiency? 2. What are the advantages of using isolation transistors in semiconductor devices?

Original Abstract Submitted

semiconductor devices are provided. a first memory cell includes a first pull-down transistor, a first pass-gate transistor, a first pull-up transistor, and a first isolation transistor. a second memory cell includes a second pull-down transistor, a second pass-gate transistor, a second pull-up transistor, and a second isolation transistor. the first and second isolation transistors share a common gate connected to a vdd line. the gates of the first and second pass-gate transistors are connected to a first wl landing pad and a second wl landing pad. the sources of the first and second pass-gate transistors are connected to the first and second bit lines. the vdd line, the first and second wl landing pads, and the first and second bit lines are formed in a first metal layer, and the vdd line, the first and second bit lines are longer than the first and second wl landing pads.