Taiwan semiconductor manufacturing company, ltd. (20240380402). Semiconductor Device For Logic and Memory Co-Optimization simplified abstract
Contents
- 1 Semiconductor Device For Logic and Memory Co-Optimization
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Device For Logic and Memory Co-Optimization - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Co-Optimization of Core Logic and SRAM Devices
- 1.13 Original Abstract Submitted
Semiconductor Device For Logic and Memory Co-Optimization
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
Semiconductor Device For Logic and Memory Co-Optimization - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240380402 titled 'Semiconductor Device For Logic and Memory Co-Optimization
Simplified Explanation
The patent application describes structures and methods for optimizing both core logic devices and SRAM devices in a semiconductor device. This includes a logic portion with a logic device and a memory portion with an SRAM device.
- A logic device with a single fin N-type FinFET and a single fin P-type FinFET is placed in the logic portion.
- An SRAM device in the memory portion consists of an N-well region between two P-well regions, with different types of FinFET transistors in each region.
Key Features and Innovation
- Co-optimization of core logic devices and SRAM devices in a semiconductor device.
- Integration of different types of FinFET transistors in the logic and memory portions.
- Efficient design for improved performance and functionality.
Potential Applications
The technology can be applied in various semiconductor devices requiring both logic and memory components, such as microprocessors, embedded systems, and memory modules.
Problems Solved
- Enhances the performance and efficiency of semiconductor devices.
- Streamlines the design process for integrating logic and memory components.
- Optimizes the functionality of both core logic devices and SRAM devices.
Benefits
- Improved overall performance of semiconductor devices.
- Enhanced functionality and efficiency.
- Simplified design process for semiconductor manufacturers.
Commercial Applications
Title: Co-Optimization of Core Logic and SRAM Devices in Semiconductor Technology This technology can be utilized in the development of advanced microprocessors, embedded systems, and memory modules. It has the potential to revolutionize the semiconductor industry by offering more efficient and high-performance devices.
Prior Art
Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device design, FinFET transistors, and memory device optimization.
Frequently Updated Research
Researchers in the field of semiconductor technology are constantly exploring new methods and structures to enhance the performance and efficiency of integrated circuits. Stay updated on the latest advancements in FinFET technology and memory device design for potential improvements in co-optimization strategies.
Questions about Co-Optimization of Core Logic and SRAM Devices
What are the key advantages of integrating different types of FinFET transistors in a semiconductor device?
Integrating different types of FinFET transistors allows for optimized performance and functionality in both logic and memory components, leading to enhanced overall efficiency.
How does co-optimization of core logic devices and SRAM devices benefit the semiconductor industry?
Co-optimization improves the design process, enhances device performance, and streamlines manufacturing, ultimately leading to more advanced and efficient semiconductor products.
Original Abstract Submitted
structures and methods for the co-optimization of core (logic) devices and sram devices include a semiconductor device having a logic portion and a memory portion. in some embodiments, a logic device is disposed within the logic portion. in some cases, the logic device includes a single fin n-type finfet and a single fin p-type finfet. in some examples, a static random-access memory (sram) device is disposed within the memory portion. the sram device includes an n-well region disposed between two p-well regions, where the two p-well regions include an n-type finfet pass gate (pg) transistor and an n-type finfet pull-down (pd) transistor, and where the n-well region includes a p-type finfet pull-up (pu) transistor.
