Taiwan semiconductor manufacturing company, ltd. (20240379877). SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION simplified abstract
Contents
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsiao-Chun Chang of Hsinchu (TW)
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379877 titled 'SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
Simplified Explanation: The patent application discusses a method to tune the threshold voltages of Gaafet devices by introducing dopants into the channel region. This is achieved by doping nano-structured layers adjacent to the channels and then driving the dopants into the channels through an anneal operation to create a graduated dopant concentration profile.
- Dopants are introduced into multiple channels in a Gaafet device by doping nano-structured layers adjacent to the channels.
- An anneal operation is performed to drive the dopants from the doped layers into the channels, creating a graduated dopant concentration profile.
- Depleted doped layers are replaced with a gate structure to provide radial control of current in the surface-doped channels.
Potential Applications: 1. Semiconductor devices 2. Integrated circuits 3. Electronics industry
Problems Solved: 1. Tuning threshold voltages in Gaafet devices 2. Achieving a graduated dopant concentration profile 3. Providing radial control of current in channels
Benefits: 1. Improved performance of Gaafet devices 2. Enhanced control over current flow 3. Increased efficiency in semiconductor devices
Commercial Applications: The technology can be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency.
Questions about Gaafet Threshold Voltages: 1. How does the introduction of dopants into the channel region affect the performance of Gaafet devices? 2. What are the potential implications of achieving a graduated dopant concentration profile in semiconductor devices?
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Original Abstract Submitted
gaafet threshold voltages are tuned by introducing dopants into a channel region. in a gaafet that has a stacked channel structure, dopants can be introduced into multiple channels by first doping nano-structured layers adjacent to the channels. then, by an anneal operation, dopants can be driven, from surfaces of the doped layers into the channels, to achieve a graduated dopant concentration profile. following the anneal operation and after the dopants are diffused into the channels, depleted doped layers can be replaced with a gate structure to provide radial control of current in the surface-doped channels.
